It proves to become long-expression steady and does not drift over and above the datasheet restrictions. Infineon ensures unit parameters - RDS(on) and VSD - remain within datasheet limitation for the Procedure life time by adhering to: CoolSiC�?is synonymous with pioneering in trench SiC MOSFET technology. Infineon Again demonstrates that https://www.facebook.com/permalink.php?story_fbid=pfbid0ZH2jhnQuVnNsrf7xUngo6hnw8VNigrx8w64W2Ji5AUpczagcBgWpHE8kvQZWBEFkl&id=61562415773754&__cft__[0]=AZUv0AZ4Vzq2mZEo3P_lStgda1Mk_448-06NRE4cd3PevlhWAXppnGNb_Jbst-BWjKh_l5FL6V7cJ9WmuzUiDy6PdQe8Khi5JYxgHpgu2DYx_sAnNwVcdA-e5yaNTkA_4-8Vd79cbC7DMnkPzKjEOnikkaHkHQKTMTa-RNax5u235d9FCHnjGdOg3qI6pgBkAxWqhjiXTS6S_X9n73ZnOYpO&__tn__=%2CO%2CP-R